. . . . . . . . . .    ANM 2010     3rd International Conference on Advanced Nano Materials     12-15 September 2010 - Agadir, Morocco Back    Abstract ANMM298 GREEN ELECTRONICS FOR THE FUTURE: PAPER-E Rodrigo Martins CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal . In this paper we report the use of a sheet of cellulose fiber-based paper as the dielectric layer used in oxide based semiconductor thin film field effect transistors (FETs), memory paper and paper battery. In this new approach we are using the cellulose fiber-based paper in an “interstrate” strucutre to build up devices, either as a dielectric or a solid electrolyte, where oxide and metal layers are deposited on both sides of the paper sheet. Such hybrid FETs present excellent operating characteristics such as  saturation mobility >30 cm2/Vs, drain-source current on/off modulation ratio of approximately 1E4, near-zero threshold voltage, enhancement n-type operation and sub-threshold gate voltage swing of 0.8 V/ decade. These results outpace those of amorphous Si TFTs and rival with the same oxide based TFTs produced on either glass or crystalline silicon substrates. We also was able to produce a floating gate FET paper memory with retention times exceeding 14500 hours, as well as a rechrgeable paper battery able to supply an output voltage of 3 V with current densities up to 0.5 mA/cm2, able to power the paper transistor and the paper memory. The compatibility of these devices with large-scale/large-area deposition techniques and low cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID and point-of-care systems, among others. . © nanoAC . . . . . . . . . .

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