. . . . . . . . . .    ANM 2010     3rd International Conference on Advanced Nano Materials     12-15 September 2010 - Agadir, Morocco Back    Abstract ANMM297 FROM N-TYPE TO P-TYPE OXIDE BASED THIN FILM TRANSISTORS Elvira Fortunato CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal . Although the performance achieved with oxide transistors processed at low temperatures exceed far beyond the ones obtained with amorphous silicon and organic semiconductors, the oxides reported in the literature are mostly limited to n-type device applications, 1-6 since there is a lack of p-type oxide semiconductors, mainly regarding the ones processed at low substrate temperatures. This confines the field of application of oxide semiconductors solely to unipolar (n-type) devices, inhibiting the fabrication of complementary MOS (CMOS) structures where both n- and p-type transistors are needed, as demanded for the next generation of flexible and disposable low cost electronic systems, away from the traditional silicon technology. In this work we report p-type oxide TFTs based on transparent SnOx and Cu2O semiconductors deposited by reactive rf sputtering at room temperature, with the final devices requiring annealing temperatures of only 200 °C to exhibit improved electrical properties over similar devices reported in literature, produced at considerably higher temperatures. The good performance achieved precludes a promising future integration of these devices with the already well-established n-type oxide TFTs in flexible, low-cost and transparent CMOS structures. Furthermore, the sputtering technique presents a great advantage regarding the industrial migration of these devices, as it has been widely used by industry due to the easy control of the deposition parameters and to the possibility of obtaining uniform films over large surfaces. . © nanoAC . . . . . . . . . .

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