. . . . . . . . . .    ANM 2010     3rd International Conference on Advanced Nano Materials     12-15 September 2010 - Agadir, Morocco Back    Abstract ANMM169 NONRESONANT DETECTION OF TERAHERTZ RADIATION IN HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE USING InAlAs/InGaAs/InP MATERIAL SYSTEMS AT ROOM TEMPERATURE Amine El Moutaouakil (1), Tetsuya Suemitsu (1), Taiichi Otsuji (1), Dominique Coquillat (2), Wojciech Knap (2) (1) Research Institute of Electrical Communication (RIEC), Tohoku University (2) Groupe d’Etude des Semiconducteurs GES-CNRS, Monpellier 2 University . Terahertz (THz) technology gained a huge interest in the recent years, due to its potential applications in security, materials identification, communication, and imaging. High-electron-mobility transistors (HEMTs) based on InAlAs/InGaAs/InP material systems have successfully demonstrated better emission properties of THz radiation over InGaP/InGaAs/GaAs HEMTs, making them a better candidate as THz emitters, due to their smaller size and higher quality factor. In this paper, we report on nonresonant detection of THz radiation using a HEMT device based on the similar structure at room temperature. The experiments were performed using a Gunn diode operating at 300 GHz as the THz source. The measured responsivity showed reasonable coupling and polarization dependence to the THz radiation, taking the highest value when the incident THz radiation is linearly polarized to the source-drain direction. Compared to the traditional HEMTs, the responsivity of this device was relatively higher than 230 V/W, which is due to the higher electron sheet density in the channel and the good lattice matching, resulting in a better quality factor. The noise equivalent power (NEP) was also measured and it had a lower value of ~10^(-11) W/Hz^(0.5), which is well comparable to Microbolometers operating at 4K. Obtained performances are also well comparable to, or even higher than, those for other HEMTs and other THz detectors at room temperature (Golay cells, Shottky diodes and Pyroelectric detectors). In summary, we successfully confirmed a highly sensitive nonresonant THz detection in our InAlAs/InGaAs/InP HEMT at room temperature. The measured responsivity and NEP exhibited higher values, promoting the device as the smallest and most effective THz detector. . © nanoAC . . . . . . . . . .

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